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| STT2622 Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8[ N-Channel Enhancement Mode Power Mos.FET Description The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SOT-26 is universally used for all commercial-industrial applications. Features * RoHS Compliant * Low Gate Charge * Surface Mount Package D1 S1 5 D2 4 D1 D2 6 REF. A A1 A2 c D E E1 Date Code 2622 G1 G2 1 G1 2 S2 3 G2 S1 S2 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0 10 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 50 20 520 410 1.5 0.8 0.006 -55~+150 Unit V V mA mA A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient3 (Max) Symbol Rthj-a Ratings 150 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 STT2622 Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8 [ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) Static Drain-Source On-Resistance2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 50 _ Typ. _ Max. _ _ Unit V V/ oC V uA uA uA Test Condition VGS=0V, ID= 250uA Reference to 25oC ,ID= 1mA VDS=VGS, ID=250uA VGS= 20V VDS=50V,VGS=0 VDS= 40V,VGS=0 VGS=10V, ID=500mA 0.06 _ _ _ _ 1.0 _ _ _ _ 3.0 30 10 100 1.8 3.2 1.6 _ _ _ _ _ _ _ _ 1 0.5 0.5 12 10 56 29 32 8 6 600 RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ [ VGS=4.5V, ID=200mA Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=500mA VDS=40V VGS=4.5V VDD= 25V ID= 500mA nS VGS=10V RG=3.3[ RD=50 [ 50 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ mS VDS=10V, ID=500mA Source-Drain Diode Parameter Forward On Voltage 2 Symbol VS D Min. _ Typ. _ Max. 1.3 Unit V Test Condition IS=600mA , VGS=0V. Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 in copper pad of FR4 board; 250 OC/W when mounted on min. copper pad. 2 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 STT2622 Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 STT2622 Elektronische Bauelemente 520mA, 50V,RDS(ON) 1.8[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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